Silicon Carbide (SiC) MOSFET – EliteSiC, 16 mohm, 650 V, M3S, T2PAK

Overview

EliteSiC 650V M3S MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.  The T2PAK allows heat to be drawn directly into the heatsink rather than being forced into the main circuit board.

  • Automotive On Board Charger (OBC)
  • DC/DC converters for EV/HEV

  • Automotive EV/HEV

  • New M3S technology: 23 mohm RDS(ON) with low Eon and Eoff losses
  • Qualified for automotive per AEC-Q101
  • 15V to 18V gate drive
  • T2PAK top cool package
  • Devices are Pb-free and RoHS compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NVT2016N065M3S

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Active

CAD Model

Pb

A

H

P

T2PAK-7 11.80x14.00x3.50, 1.27P

1

245

REEL

800

No

M3S

650

97

18

104

207

175

$6.8864

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