NVHL160N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, TO247−3L

Datasheet: Silicon Carbide (SiC) MOSFET – 160 mohm, 1200 V, M1, TO-247-3L
Rev. 2 (234kB)
Product Overview
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Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • 1200V rated
 
  • Blocking Voltage
  • High Speed Switching and Low Capacitance
 
  • Coss = 50
  • Qualified for Automotive According to AEC−Q101
 
  • Devices are Pb−Free and are RoHS Compliant
Applications   End Products
  • DC-DC Power
  • On Board Charging
 
  • EV/HEV
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
SECO-HVDCDC1362-15W-GEVB Active
Pb-free
15 W SiC High-Voltage Auxiliary Power Supply for HEV & BEV Applications
SECO-HVDCDC1362-40W-GEVB Active
Pb-free
40 W SiC high-voltage auxiliary power supply for HEV & BEV applications
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVHL160N120SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL160N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L TO-247-3LD 340CX NA Tube 450 $7.0549
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NVHL160N120SC1  
 $7.0549 
Pb
A
H
P
 Active   
M1
1200
26
160
24
40
175
TO-247-3LD
Case Outlines
340CX   
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