NVHL160N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L

Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Applications

DC-DC Power
On Board Charging

End Products

EV/HEV

Features

1200V rated
High Speed Switching and Low Capacitance
Qualified for Automotive According to AEC−Q101

Material Composition

Product Change Notification

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Blocking Voltage BV_DSS (V)

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R_DS(on) Typ @ 25°C (mΩ)

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T_j Max (°C)

Pricing ($/Unit)

NVHL160N120SC1

Active

TO-247-3LD

340CX

TUBE

450

1200

160

175

$10.5953

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Silicon Carbide (SiC) MOSFETs | NVHL160N120SC1

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mΩ, 1200 V, M1, TO247−3L

Overview

Availability & Samples (size)

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