NVHL080N120SC1A: Silicon Carbide MOSFET, N‐Channel, 1200 V, 80 mΩ, TO247−3L

Datasheet: MOSFET - Power, N-Channel, Silicon Carbide, TO-247-3L
Rev. 1 (291kB)
Product Overview
View Material Composition
Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • High Speed Switching and Low Capacitance
 
  • Coss = 80pF
  • 1200V rated
   
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
   
  • 100% UIL Tested
   
  • Qualified for Automotive According to AEC−Q101
   
Applications   End Products
  • PFC
  • LLC
 
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVHL080N120SC1A Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL080N120SC1A, Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?3L TO-247-3LD 340CX 1 260 Tube 450 $5.4145
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NVHL080N120SC1A  
 $5.4145 
Pb
A
H
P
 Active   
N-Channel
Single
1200
31
80
56
80
175
TO-247-3LD
Case Outlines
340CX   
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Overview of Wide Bandgap and Silicon Carbide (SiC) Capabilities
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