Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • On Board Charger (OBC)
  • DC DC Inverter
  • Automotive EV/HEV
  • Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A
  • Qualified for Automotive According to AEC−Q101
  • High Speed Switching and Low Capacitance
  • Devices are Pb−Free and are RoHS Compliant

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ECAD Models

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NVHL040N120SC1

Active

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Y

M1

1200

60

40

106

140

175

$18.3626

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