NVHL040N120SC1: Silicon Carbide MOSFET, N‐Channel, 1200 V, 40 mΩ, TO247−3L

Datasheet: Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-3L
Rev. 2 (241kB)
Product Overview
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A
 
  • Typical RDS(on) = 40mΩ
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive Grade
  • High Speed Switching and Low Capacitance
   
  • Devices are Pb−Free and are RoHS Compliant
   
Applications   End Products
  • On Board Charger (OBC)
  • DC DC Inverter
 
  • Automotive EV/HEV
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1) Videos (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVHL040N120SC1 Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVHL040N120SC1, Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, TO247?3L TO-247-3LD 340CX NA Tube 450 $18.3626
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NVHL040N120SC1  
 $18.3626 
Pb
A
H
P
 Active   
M1
1200
60
40
106
140
175
TO-247-3LD
Case Outlines
340CX   
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