Silicon Carbide (SiC) MOSFETs | NVH4L200N170M1

Silicon Carbide (SiC) MOSFET – EliteSiC, 192 mohm, 1700 V, M1, TO-247-4L

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Overview

The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.

  • Flyback converter
  • DC-DC
  • OBC

  • Automotive EV/HEV

  • 18V to 20V Gate Drive
  • New 1700V M1 technology: 192mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

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NVH4L200N170M1

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CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

M1

1700

13

192

31

33

175

Price N/A

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