NVH4L095N065SC1: SiC Power MOSFET, N‐Channel, 650 V, 70 mΩ, 31 A, TO247−4L

Datasheet: MOSFET - SiC Power, Single N-Channel, TO247-4L
Rev. 0 (243kB)
Product Overview
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Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive Grade Qualified
  • Ultra Low Gate Charge (Typ. Qg = 50 nC)
 
  • Low switching loss
  • High Speed Switching with Low Capacitance (Coss = 89 pF)
 
  • Low switching loss
  • Zero reverse recovery current of body diode
 
  • Higher system reliability in LLC and Phase shift full bridge circuit
  • Kelvin Source configuration
 
  • Lower switching loss and lower Vgs oscillation
  • Typ. RDS(on) = 70 mΩ at Vgs = 18V
   
  • 100% UIL Tested
   
  • RoHS Compliant
   
Applications   End Products
  • Automotive DC/DC and PFC
 
  • Automotive On Board Charger
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVH4L095N065SC1 Active 
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVH4L095N065SC1, Silicon Carbide (SiC) MOSFET - 95 mohm, 650 V, M2, TO-247-4L TO-247-4 340CJ NA Tube 450 $5.7865
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NVH4L095N065SC1  
 $5.7865 
Pb
A
H
P
 Active   
M2
650
31
95
50
89
175
TO-247-4
Case Outlines
340CJ   
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