Silicon Carbide (SiC) MOSFETs | NVH4L050N170M1

Silicon Carbide (SiC) MOSFET – EliteSiC, 53 mohm, 1700 V, M1, TO-247-4L

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with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.

  • Flyback converter
  • DC-DC
  • OBC

  • Automotive EV/HEV

  • 18V to 20V Gate Drive
  • New 1700V M1 technology: 53mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

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NVH4L050N170M1

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CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

M1

1700

45

53

105

98

175

$14.493

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