NVH4L022N120M3S: SiC MOSFET 1200 V 22 mohm M3S Series in TO247-4LD package

Datasheet: Silicon Carbide (SiC) MOSFET – 22 mohm, 1200 V, M3S, TO-247-4L
Rev. 2 (274kB)
Product Overview
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Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Max RDS(on) = 30mΩ at Vgs =18V, Id = 60A
 
  • Typical RDS(on) = 22mΩ
  • Qualified for Automotive According to AEC−Q101
 
  • Automotive Grade
  • 15V to 18V Gate Drive
   
  • Devices are Pb−Free and are RoHS Compliant
   
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
   
Applications   End Products
  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV
 
  • Automotive EV/HEV
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1) Videos (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVH4L022N120M3S Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVH4L022N120M3S TO-247-4 340CJ NA Tube 450 $29.8025
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NVH4L022N120M3S  
 $29.8025 
Pb
A
H
P
 Active   
M3S
1200
88
22
148
148
175
TO-247-4
Case Outlines
340CJ   
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