Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 160 mohm, 1200 V, M1, D2PAK−7L

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Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • High power DCDC
  • Inverter
  • Automotive DC/DC converter for EV/PHEV
  • Automotive Inverters
  • Qualified for Automotive According to AEC−Q101
  • 1200V rated
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Devices are RoHS Compliant

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NVBG160N120SC1

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Active

CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

REEL

800

Y

M1

1200

19.5

160

33.8

50.7

175

$5.4724

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