Silicon Carbide (SiC) MOSFET - 70 mohm, 650 V, M2, D2PAK−7L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Automotive
  • On Board Charger
  • DC/DC Converter
  • High Junction Temperature (Tj = 175°C)
  • Kelvin Source Configuration
  • Ultra Low Gate Charge (QG(tot) = 50 nC)
  • Low Output Capacitance (Coss = 89 pF)
  • Zero reverse recovery current of body diode
  • Typ. RDS(on) = 70 mΩ
  • 650V rated
  • 100% UIL Tested
  • Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
  • Moisture Sensitivity Level 1 guarantee
  • Internal Gate Resistance: 7.6 Ω

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ECAD Models

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Blocking Voltage BVDSS (V)

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NVBG095N065SC1

Active

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

260

REEL

800

F

M2

650

30

70

50

89

175

$9.2184

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