Silicon Carbide (SiC) MOSFET- EliteSiC, 40 mohm, 1200 V, M3S, D2PAK-7L

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Overview

1200V M3S planar EliteSiC MOSFET is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • On Board Charger (OBC)
  • DC/DC converters for EV/HEV
  • Automotive EV/HEV
  • Typical RDS(on) = 40mΩ at Vgs =18V, Id = 25A
  • Qualified for Automotive According to AEC−Q101
  • New M3S technology: 40.8mohm RDS(ON) with low EON and EOFF losses
  • 15V to 18V Gate Drive
  • Devices are Pb−Free and are RoHS Compliant

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Blocking Voltage BVDSS (V)

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Reference Price

NVBG040N120M3S

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Active

CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

260

REEL

800

F

M3S

1200

57

40

75

80

175

$11.773

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