Name: Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK−7L
Brand: Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK−7L
SKU: NVBG025N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK−7L

Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Applications

Automotive

End Products

DC/DC conversion
On Board Charger

Features

High Junction Temperature (Tj = 175°C)
Kelvin Source Configuration
Ultra Low Gate Charge (QG(tot) = 164 nC)
Low Output Capacitance (Coss = 278 pF)
Zero reverse recovery current of body diode
650V rated
100% Avalanche Tested
Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Moisture Sensitivity Level 1 guarantee
Internal Gate Resistance: 1.5 Ω

Material Composition

Product Change Notification

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Blocking Voltage BV_DSS (V)

I_D(max) (A)

R_DS(on) Typ @ 25°C (mΩ)

Q_g Total (nC)

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T_j Max (°C)

Reference Price

NVBG025N065SC1

Active

D2PAK7 (TO-263-7L HV)

418BJ

260

REEL

800

650

106

164

278

175

$18.1831

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Silicon Carbide (SiC) MOSFETs | NVBG025N065SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK−7L

Overview

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