Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200V, M1, D2PAK−7L

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Overview

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • High power DCDC
  • Inverter
  • Automotive DC/DC converter for EV/PHEV
  • Automotive Inverters
  • 1200V rated
  • Qualified for Automotive According to AEC−Q101
  • Max RDS(on) = 28 mΩ at Vgs = 20V, Id = 60A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested
  • Devices are RoHS Compliant

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MSL Temp (°C)

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ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

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Tj Max (°C)

Reference Price

NVBG020N120SC1

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Active

CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

1

245

REEL

800

Y

M1

1200

98

20

220

258

175

$31.8634

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