Silicon Carbide (SiC) MOSFETs | NTHL160N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging
  • Solar Inverter
  • Network Power Supply
  • Charging Stations
  • Motor Control
  • High Speed Switching and Low Capacitance
  • Max RDS(on) = 224mΩ at Vgs = 20V, Id = 12A
  • 1200V
  • 100% UIL Tested

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NTHL160N120SC1

Active

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

Y

M1

1200

26

160

24

40

175

$4.4161

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