Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-3L

Favorite

Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • PFC
  • Boost Inverter
  • PV Charging
  • Solar Inverter
  • Network Power Supply
  • Charging Stations
  • Max RDS(on) = xxmΩ at Vgs = 20V, Id = 20A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

1

Share

Product Groups:

Orderable Parts:

1

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Reference Price

NTHL040N120SC1

Loading...

Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Y

M1

1200

60

40

106

140

175

$11.6741

More Details

Show More

1-25 of 25

Products per page

Jump to :