Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, TO-247-3L

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Overview

The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Excellent FOM [ = Rdson * Eoss ]
  • Ultra Low Gate Charge (QG(tot) = 55 nC)
  • High Speed Switching with Low Capacitance (Coss = 114 pF)
  • 15V to 18V Gate Drive
  • New M3S technology: 32 mohm RDS(ON) with low Eon and Eoff losses
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

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Reference Price

NTHL032N065M3S

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CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

F

M3S

650

51

32

55

114

175

$4.5798

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