NTHL022N120M3S: SiC MOSFET 1200 V 22 mohm M3S Series in TO247-3LD package

Datasheet: Silicon Carbide (SiC) MOSFET
Rev. 0 (235kB)
Product Overview
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Product Change Notification
The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. 
Features   Benefits
     
  • TO247-4LD package for low common source inductance
 
  • Reduced EON losses
  • 15V to 18V Gate Drive
 
  • 18V for best performance; 15V for compatibility with IGBT driver circuits
  • New M3S technology: 22mohm RDS(ON) with low EON and EOFF losses
 
  • Improved power density
  • 100% Avalanche Tested
 
  • Improved robustness to unexpected incoming voltage spikes or ringing
Applications   End Products
  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion
 
  • UPS
  • Electric Vehicle Chargers
  • Solar Inverters
  • Energy Storage Systems
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTHL022N120M3S Active 
Pb-free
Halide free
NTHL022N120M3S TO-247-3LD 340CX NA Tube 450 $23.5593
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (nC)
Output Capacitance (pF)
Tj Max (°C)
Package Type
NTHL022N120M3S  
 $23.5593 
Pb
H
 Active   
M3S
1200
88
22
148
148
175
TO-247-3LD
Case Outlines
340CX   
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