Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-3L

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Overview

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. 

  • Industrial
  • UPS / ESS
  • Solar
  • EV Charger
  • Excellent FOM [ = Rdson * Eoss ]
  • New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses
  • 15V to 18V Gate Drive
  • 100% Avalanche Tested
  • Halide Free and RoHS Compliant

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Product

Status

ECAD Models

Compliance

Package Type

MSL Type

MSL Temp (°C)

ON Target

Family

Blocking Voltage BVDSS (V)

ID(max) (A)

RDS(on) Typ @ 25°C (mΩ)

Qg Total (nC)

Output Capacitance (pF)

Tj Max (°C)

Pricing ($/Unit)

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NTHL022N120M3S

Active

Pb

A

H

P

TO-247-3LD

NA

0

F

M3S

1200

88

22

148

148

175

$23.5593

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