Silicon Carbide (SiC) MOSFET - EliteSiC, 70 mohm, 650 V, M2, TO-247-4L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • Telecommunication
  • Cloud system
  • Industrial
  • Telecom power
  • Server power
  • EV charger
  • Solar / UPS
  • TJ = 175°C
  • Ultra Low Gate Charge (Typ. Qg = 50 nC)
  • High Speed Switching with Low Capacitance (Coss = 89 pF)
  • Zero reverse recovery current of body diode
  • Kelvin Source configuration
  • Typ. RDS(on) = 70 mΩ at Vgs = 18V
  • 100% UIL Tested
  • RoHS Compliant

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Blocking Voltage BVDSS (V)

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Reference Price

NTH4L095N065SC1

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CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

F

M2

650

31

70

50

89

175

$6.3332

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