Silicon Carbide (SiC) MOSFET - 12 mohm, 650 V, M2, TO247−4L

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Overview

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

  • DC-DC Converter
  • Boost Inverter
  • UPS
  • Solar
  • Power Supply
  • High Junction Temperature
  • 100% UIL Tested
  • RoHS Compliant
  • High Speed Switching and Low Capacitance
  • 650V rated
  • Max RDS(on) = 18.7 mΩ at Vgs = 18V, Id = 60A

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NTH4L015N065SC1

Active

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

F

M2

650

142

12

283

430

175

$23.9251

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