Silicon Carbide (SiC) MOSFETs | NTBG1000N170M1

Silicon Carbide (SiC) MOSFET – EliteSiC, 960 mohm, 1700 V, M1, D2PAK-7L

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Overview

The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.

  • Industrial

  • UPS / ESS
  • Solar
  • EV Charger

  • D2PAK-7L package for low common source inductance
  • 18V to 20V Gate Drive
  • New 1700V M1 technology: 28mohm RDS(ON) with low EON and EOFF losses
  • 100% Avalanche Tested

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NTBG1000N170M1

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CAD Model

Pb

A

H

P

D2PAK7 (TO-263-7L HV)

418BJ

1

245

REEL

800

F

M1

1700

4.2

960

14

11

175

Price N/A

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