NTBG015N065SC1: Silicon Carbide MOSFET, N‐Channel, 650V, 15.3 mΩ, D2PAK−7L

Datasheet: MOSFET - Power, Single N-Channel, D2PAK-7L
Rev. 1 (232kB)
Product Overview
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Product Change Notification
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features   Benefits
     
  • Low RDSon
 
  • 15.3 mΩ
  • High Junction Temperature
 
  • Tj = 175°C
  • 100% UIL Tested
   
  • RoHS Compliant
   
  • High Speed Switching and Low Capacitance
   
  • 650V rated
   
  • Max RDS(on) = 18.4 mΩ at Vgs = 18V, Id = 60A
   
Applications   End Products
  • DC-DC Converter
  • Boost Inverter
 
  • UPS
  • Solar
  • Power Supply
Technical Documentation & Design Resources
Simulation Models (3) Data Sheets (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NTBG015N065SC1 Active
Pb-free
Halide free
NTBG015N065SC1 D2PAK7 (TO-263-7L HV) 1 245 Tape and Reel 800 $15.6881
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
Blocking Voltage BVDSS (V)
ID(max) (A)
RDS(on) Typ @ 25°C (mΩ)
Qg Total (C)
Output Capacitance (C)
Tj Max (°C)
Package Type
NTBG015N065SC1  
 $15.6881 
Pb
H
 Active   
N-Channel
Single
650
176
15.3
250
397
175
D2PAK7 (TO-263-7L HV)
Case Outlines
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