Silicon Carbide (SiC) JFETs | UJ4N075005K4S

Silicon Carbide (SiC) JFET - EliteSiC, 4.8 mohm, 750V, TO-247-4L

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Overview

The UJ4N075005K4S is a 750 V, 4.8mohm high-performance Gen
4 normally-on SiC JFET transistor. This device exhibits ultra-low on
resistance (RDS(on)) in a TO-247-4L package, making it an ideal fit to
address the challenging thermal constraints of solid-state circuit
breakers and relay applications. Additionally, the JFET is a robust
device technology capable of the high-energy switching required in
circuit protection applications.

  • Solid State / Semiconductor Circuit Breaker
  • Solid state / Semiconductor Relay
  • Battery Disconnects
  • Surge Protection
  • Inrush Current Control

  • Circuit Breaker
  • Battery Charger
  • Solar
  • Energy Storage System
  • Industrial Power Supply

  • Single digit RDS(on)
  • Operating temperature: 175°C (max)
  • High pulse current capability
  • Excellent device robustness
  • RoHS compliant
  • Silver-sintered die attach for excellent thermal resistance

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UJ4N075005K4S

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Active

CAD Model

Pb

H

TO-247-4

340AN

NA

0

TUBE

600

F

750

588

4.8

TO-247-4L

400

364

175

N

$36.1858

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