Silicon Carbide (SiC) Diodes

Overview
Products
Technical Documentation

These SiC diodes from onsemi include AEC-Q101 qualified and PPAP capable options specifically engineered and qualified for automotive and industry applications. SiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Product Family

650 V SiC Diodes

Selection of 650 V products.

1200 V SiC Diodes

Selection of 1200 V products.

1700 V SiC Diodes

Selection of 1700 V products.

Featured New Products

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NDSH20120C

Silicon Carbide Schottky Diode, 1200 V, 20 A
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NDSH50120C

Silicon Carbide Schottky Diode, 1200 V, 50 A
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NVDSH20120C

Silicon Carbide Schottky Diode, 1200 V, 20 A

Evaluation Boards

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SEC-3PH-11-OBC-EVB

Three-phase On Board Charger (OBC) PFC-LLC Platform
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SEC-6D6KW-OBC-SIC-GEVB

6.6 kW On Board Charger (OBC) SiC Model

Videos

Overview of Wide Bandgap and Silicon Carbide (SiC) Capabilities

Utilizing Wide Bandgap in Solar and Renewable Energy Applications

Utilizing Wide Bandgap in Server and Industrial Power Applications

Industrial Motor Control Evaluation System

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