NVDSH20120C: Silicon Carbide Schottky Diode, 1200V, 20A, TO-247-2LD

Datasheet: Silicon Carbide Schottky Diode
Rev. 1 (228kB)
Product Overview
View Material Composition
Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features   Benefits
     
  • Max Junction Temperature
 
  • Tj = 175 °C
  • Avalanche Rated
 
  • 166 mJ
  • High Surge Current Capacity
   
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery / No Forward Recovery
   
  • AEC-Q101 qualified and PPAP Capable
   
Applications   End Products
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
 
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
Technical Documentation & Design Resources
Simulation Models (3) Videos (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVDSH20120C Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVDSH20120C TO-247-2LD NA Tube 450 $9.9998
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
NVDSH20120C  
 $9.9998 
Pb
A
H
P
 Active   
Automotive
Single
1200
20
1.75
119
200
TO-247-2LD
Case Outlines
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Featured Video
Advantages of New Gen2 1200V SiC Diodes for Automotive and Industrial Applications
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