Silicon Carbide Schottky Diode, 1200V, 20A, TO-247-2LD

Favorite

Overview

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
  • Max Junction Temperature
  • Avalanche Rated
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 qualified and PPAP Capable

Search

Close Search

Products:

1

Expand Table

Collapse Table

Share

Export

Compare

Columns

0

Product Groups:

Orderable Parts:

1

Product

Status

ECAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

Pricing ($/Unit)

Loading...

NVDSH20120C

Active

Pb

A

H

P

TO-247-2LD

NA

0

TUBE

450

F

D3

Single

1200

20

1.75

119

200

$6.6014

More Details

Show More

1-25 of 25

Products per page

Jump to :