Silicon Carbide Schottky Diode, 1200V, 50A, TO-247-2LD

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Overview

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • SMPS
  • Solar
  • Industrial Power
  • PFC
  • UPS
  • Solar Inverter
  • Max Junction Temperature
  • Avalanche Rated
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery

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NDSH50120C

Active

Pb

A

H

P

TO-247-2LD

NA

0

TUBE

450

F

D3

Single

1200

50

1.75

231

200

$13.432

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