NDSH40120CDN: Silicon Carbide (SiC) Schottky Diode, 1200 V, 40 A, TO-247-3L

Datasheet: Silicon Carbide Schottky Diode
Rev. 0 (200kB)
Product Overview
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Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features   Benefits
     
  • Max Junction Temperature 175°C
 
  • High system reliability in high ambient temperature
  • High Surge Current Capacity
 
  • High system reliability
  • Positive Temperature Coefficient
 
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
 
  • Low switching loss
Applications   End Products
  • Industrial
 
  • UPS / ESS
  • Solar
  • EV Charger
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1) Videos (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NDSH40120CDN Active 
Pb-free
Halide free
NDSH40120CDN TO-247-3LD 340CX NA Tube 450 $11.6664
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
NDSH40120CDN  
 $11.6664 
Pb
H
 Active   
D3
Common Cathode
1200
40
1.75
119
200
TO-247-3LD
Case Outlines
340CX   
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Featured Video
Advantages of New Gen2 1200V SiC Diodes for Automotive and Industrial Applications
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