Silicon Carbide (SiC) Schottky Diode - EliteSiC, 30A, 650V, D2, TO220-2L

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Overview

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost

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  • Max Junction Temperature 175C
  • Avalanche Rated 144 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 Qualified and PPAP capable

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FFSP3065B-F085

Active

Pb

A

H

P

TO-220-2

NA

0

TUBE

800

N

D2

Single

650

30

1.7

120

160

$3.8778

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