FFSP3065A: SiC Diode - 650V, 30A, TO-220-2

Datasheet: Silicon Carbide Schottky Diode 650 V, 30 A
Rev. 3 (397kB)
Product Overview
View Reliability Data
View Material Composition
Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
 
  • Max Junction Temperature 175 °C
  • Avalanche Rated 180 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
Applications
  • PFC
  • Industrial Power
  • Solar
  • EV Charger
  • UPS
  • Welding
Evaluation/Development Tool Information
Product Status Compliance Short Description Action
SEC-6D6KW-OBC-SIC-GEVB Active
Pb-free
6.6kW OBC SiC model
Availability & Samples
Specifications
Interactive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FFSP3065A Active
Pb-free
Halide free
FFSP3065A TO-220-2 340BB NA Tube 800 $6.1188
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Device Grade
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSP3065A  
 $6.1188 
Pb
H
 Active   
Commercial
Single
650
30
1.75
150
200
TO-220-2
Case Outlines
340BB   
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