FFSP2065B: Silicon Carbide Schottky Diode 650V 20A TO220

Datasheet: Silicon Carbide Schottky Diode, 650 V, 20 A
Rev. 1 (210kB)
Product Overview
View Reliability Data
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Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features   Benefits
     
  • Max Junction Temperature
 
  • 175 C
  • Avalanche Rated
 
  • 94 mJ
  • High Surge Current Capacity
   
  • Positive Temperature Coefficient
   
  • Ease of Paralleling
   
  • No Reverse Recovery/No Forward Recovery
   
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
   
Applications   End Products
  • General Purpose
  • SMPS
  • Solar Inverter
  • UPS
  • Power Switching Circuit
 
  • Server
  • Power Supplies
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1) Videos (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FFSP2065B Active
Pb-free
Halide free
FFSP2065B, 650V 20A Silicon Carbide Schottky Diode TO-220-2 340BB NA Tube 800 $3.8612
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19) : <1K

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSP2065B  
 $3.8612 
Pb
H
 Active   
D2
Single
650
22.5
1.7
84
40
TO-220-2
Case Outlines
340BB   
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