FFSH4065A: SiC Diode, 650V, 40A, TO-247-2

Datasheet: Silicon Carbide Schottky Diode 650 V, 40 A
Rev. 2 (172kB)
Product Overview
View Reliability Data
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Product Change Notification
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
 
  • Max Junction Temperature 175 °C
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
Applications
  • PFC
  • Industrial Power
  • Solar
  • EV Charger
  • UPS
  • Welding
Technical Documentation & Design Resources
Simulation Models (3) Package Drawings (1)
Data Sheets (1) Videos (1)
Availability & Samples
Specifications
Interactive Block Diagram
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FFSH4065A Active
Pb-free
Halide free
FFSH4065A TO-247-2 340CL NA Tube 450 $7.6974
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Family
Configuration
VRRM (V)
IF(ave) (A)
VF (Max)
IFSM (A)
IR (Max) (µA)
Package Type
FFSH4065A  
 $7.6974 
Pb
H
 Active   
D1
Single
650
40
1.75
TO-247-2
Case Outlines
340CL   
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