Silicon Carbide (SiC) Combo JFET - EliteSiC, 5.3 mohm, 750V, TO-247-4L

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Overview

The UG4SC075006K4S "Combo-JFET" integrates both a 750V
SiC JFET and a Low Voltage Si MOSFET into a single TO-247-4L
package. This innovative approach allows users to create circuitry
that would enable a normally-off switch while leveraging the
benefits of a normally-on SiC JFET. These benefits include ultra-low
on-resistance (RDS(on)) to minimize conduction losses and the
exceptional robustness characteristic of a simplified JFET device
structure, making it capable of handling the high-energy switching
required in circuit protection applications. For switch-mode power
conversion application, this device provides separate access to the
JFET and MOSFET gates for improved speed control and ease of
paralleling multiple devices.

  • Solid State / Semiconductor Circuit Breaker
  • Solid state / Semiconductor Relay
  • Battery Disconnects
  • Surge Protection
  • Inrush Current Control
  • High power switch mode converters (>25kW)

  • Circuit Breaker
  • Battery Charger
  • Solar
  • Energy Storage System
  • Industrial Power Supply

  • Single digit RDS(on)
  • Normally-off capability
  • Improved speed control
  • Improved parallel device operation (3+FETs)
  • Operating temperature: 175°C (max)
  • High pulse current capability
  • Excellent device robustness
  • Silver-sintered die attach for excellent thermal resistance
  • short circuit rated

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UG4SC075006K4S

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CAD Model

Pb

A

H

P

-

-

NA

0

REEL

1

F

750

588

5.3

TO-247-4L

164

362

$30.1326

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