Schottky Rectifier 5A, 60V, Bare Die Sale

Obsolete

Overview

This device employs the Schottky Barrier principle in a large areametal−to−silicon power diode. State−of−the−art geometry featuresepitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for low voltage, high frequency rectification, oras free wheeling and polarity protection diodes.

  • Automotive

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CAD Models

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Case Outline

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ON Target

Configuration

VRRM Min (V)

VF Max (V)

IRM Max (µA)

IO(rec) Max (A)

IFSM Max (A)

trr Max (ns)

Cj Max (pF)

Reference Price

SBRC560TR

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Obsolete

CAD Model

Pb

A

H

P

-

-

NA

0

DSFTP

6000

N

Single

60

0.78

150

5

100

-

-

Price N/A

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