Schottky Diodes & Schottky Rectifiers | NSR2030DMX

2A, 30V Schottky Half Bridge

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Overview

These half bridge Schottky barrier diodes are designed for therectification of the high speed signal of wireless charging. TheNSR2030DMX has a very low forward voltage that will reduceconduction loss. It is housed in a XDFN 2.0 x 1.35 x 0.4 mm packagethat is ideal for space constrained wireless applications.

  • Wireless Charging for Wearables, Portable Electronics and Smartphones - PRU
  • Power Rectification

  • Wearables, Portable Electronics and Smartphones - PRU

  • Low Forward Voltage − 0.54 V (Typ) @ IF = 2 A
  • These Devices are Pb−Free, Halogen Free and are RoHS Compliant
  • Extremely Fast Switching Speed
  • Low Leakage - 5 uA @ VF= 30 V

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NSR2030DMXTAG

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CAD Model

Pb

A

H

P

XDFN-4

711BD

1

260

REEL

3000

N

Dual

30

0.65

20

-

8

25

76

Price N/A

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Reliability Data

Die Related Summary Data

Device: NSR2030DMXTAG

Equivalent to wafer fab process: SSD

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Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SSD

0

6889897810

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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