Schottky Diodes & Schottky Rectifiers | NBRS2H100T3G

Schottky Power Rectifier, Surface Mount, 2.0 A, 100 V

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Overview

The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.

  • Power Conversion Circuit
  • Reverse Battery Protection
  • Gate Driving Circuit
  • Protection and Free-Wheeling
  • General converters
  • Lighting
  • Gasoline Direct Injection
  • Compact Package with J-Bend Leads Ideal for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Guard-Ring for Overvoltage Protection
  • Low Forward Voltage Drop
  • This is a Pb-Free Device

    Mechanical Characteristics:
  • Case: Molded Epoxy
  • Epoxy Meets UL 94 V-0 @ 0.125 in
  • Weight: 70 mg (approximately)
  • Cathode Polarity Band
  • Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds
  • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
  • ESD Ratings:
    Machine Model = C, Human Body Model = 3B
  • Device Meets MSL1 Requirements
  • NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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