Schottky Diodes & Schottky Rectifiers | MBRP20060CT

200A 60V Schottky Rectifier

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Overview

...employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.

  • Dual Die Construction - May be Paralleled for High Current Output
  • Guardring for Stress Protection
  • Low Forward Voltage
  • 175°C Operating Junction Temperature

    Mechanical Characteristics:
  • Case: Epoxy, Molded with Metal Heatsink Base
  • Weight: 80 grams (approximately)
  • Finish: All External Surfaces Corrosion Resistant
  • Top Terminal Torque: 25-40 in-lb max.
  • Base Plate Torques: See procedure given in the Package Outline Section
  • Shipped 25 units per foam
  • Marking: B20060T
  • Pb-Free Package is Available

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