Schottky Diodes & Schottky Rectifiers | MBRAF1100

1.0 A, 100 V, Schottky Rectifier

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Overview

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • High Blocking Voltage - 100 V
  • 150°C Operating Junction Temperature
  • Guard-Ring for Stress Protection
  • This is a Pb-Free Device

    Mechanical Characteristics:
  • Case: Epoxy, Molded
  • Weight: 95 mg (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads are Readily Solderable
  • Lead and Mounting Surface Temperature for Soldering Purposes:
    260°C Max. for 10 Seconds
  • Shipped in 12 mm Tape and Reel, 5000 Units per Reel
  • Cathode Polarity Band

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MBRAF1100T3G

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CAD Model

Pb

A

H

P

SMA-FL

403AA

1

260

REEL

5000

N

Single

100

0.75

500

1

50

-

-

$0.2536

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Reliability Data

Die Related Summary Data

Device: MBRAF1100T3G

Equivalent to wafer fab process: RECT

Product Technology

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Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

RECT

3

19108175705

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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