Schottky Diodes & Schottky Rectifiers | MBR835

Axial Lead Rectifiers

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Overview

. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.

  • High Current Capability
  • Low Stored Charge, Majority Carrier Conduction
  • Low Power Loss/High Efficiency
  • Highly Stable Oxide Passivated Junction
  • Guard-Ring for Stress Protection
  • Low Forward Voltage
  • High Surge Capacity

    Mechanical Characteristics:
  • Case: Epoxy, Molded
  • Weight: 1.1 gram (approximately)
  • Finish: All External Surfaces Corrosion Resistant
    and TerminalLeads are Readily Solderable
  • Lead and Mounting Surface Temperature for Soldering Purposes:
    220?C Max. for 10 Seconds, 1/16", from case
  • Shipped in plastic bags, 500 per bag
  • Available Tape and Reeled, 1500 per reel,
    by adding a "RL" suffix to the part number
  • Polarity: Cathode indicated by Polarity Band
  • ESD Protection: Human Body Model > 4000 V (Class 3)
    ESD Protection: Machine Model > 400 V (Class C)

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