Schottky Diodes & Schottky Rectifiers | MBRB3030CTL

Schottky Barrier Rectifier, 30 V, 30 A

Obsolete

Datasheet

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Overview

The Schottky Rectifier uses the Schottky Barrier principle with a proprietary barrier metal.

  • Dual Diode Construction - May be Paralleled for Higher Current Output
  • Guardring for Stress Protection
  • Low Forward Voltage Drop
  • 125?C Operating Junction Temperature
  • Maximum Die Size
  • Short Heat Sink Tab Manufactured - Not Sheared!
  • These are Pb-Free Packages
  • AEC-Q101 Qualified and PPAP Capable
  • NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

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VRRM Min (V)

VF Max (V)

IRM Max (µA)

IO(rec) Max (A)

IFSM Max (A)

trr Max (ns)

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Reference Price

MBRB3030CTLG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418B-04

1

260

TUBE

50

N

Common Cathode

30

0.51

2000

30

300

-

-

Price N/A

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Reliability Data

Die Related Summary Data

Device: MBRB3030CTLG

Equivalent to wafer fab process: RECT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

RECT

3

19108175705

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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