RF Transistors | NSVF6001SB6

RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz

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Overview

This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.

  • Low Noise Amplifier

  • Automotive Radio Antenna
  • Automotive TV Antenna
  • DAB Antenna

  • High Current (IC = 100 mA)
  • Ultra miniature and thin 6 pin package
  • High Collector Dissipation (800 mW)
  • Pb-Free, Halogen Free and RoHS compliance
  • AEC-Q101 qualified and PPAP capable
  • High Gain : lS21el2 = 11 dB typ (f = 1 GHz)
  • High Cut-off Frequency : fT = 6.7 GHz typ

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NSVF6001SB6T1G

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CAD Model

Pb

A

H

P

CPH-6

318BD

1

260

REEL

3000

N

NPN

0.1

12

90

180

0.8

5000

1.1

11

$0.1955

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Reliability Data

Die Related Summary Data

Device: NSVF6001SB6T1G

Equivalent to wafer fab process: SSD

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SSD

0

6889897810

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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