NID6002N

Self-Protected MOSFET 65 V, 11 A, 210 mΩ Single N-Channel with Temperature and Current Limit

Overview

NID6002N is part of an advanced series of power MOSFETs which utilize ON Semiconductor's latest smart MOSFET technology process. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.

Applications

General use Automotive Driver

Features

Short circuit protection
Over-temperature protection with automatic restart
Gate-Drain clamp

Material Composition

Product Change Notification

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

V_(BR)DSS Min (V)

I_D Typ (A)

r_DS(on) Max (mΩ)

P_D Max (W)

Reference Price

NID6002NT4

Obsolete

DPAK-3

369C

235

REEL

2500

N-Channel

6.5

210

2.5

Price N/A

NID6002NT4G

Consult Sales Office

DPAK-3

369C

260

REEL

2500

N-Channel

6.5

210

2.5

$0.5333

Product Number:

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Protected MOSFETs | NID6002N

Self-Protected MOSFET 65 V, 11 A, 210 mΩ Single N-Channel with Temperature and Current Limit

Overview

Product List

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