NXH040F120MNF1: SiC Module, 4-PACK Full Bridge Topology, 1200 V, 40 mohm SiC MOSFET

Datasheet: F1-4PACK SiC MOSFET Module
Rev. P0 (1582kB)
Product Overview
View Material Composition
Product Change Notification
The NXH040F120MNF1 is a SiC MOSFET module containing a 40 mohm SiC MOSFET full bridge and an NTC thermistor in an F1 module.
Features   Benefits
     
  • Recommended gate voltage 18V - 20V
 
  • Improved RDS(ON) at higher voltage
  • Low thermal resistance
 
  • Improved efficiency or higher power density
  • Options for TIM or no TIM
 
  • Flexible solution for high reliability thermal interface
Applications   End Products
  • AC-DC Conversion
  • DC-AC Conversion
  • DC-DC Conversion
 
  • Electric Vehicle Charger
  • Energy Storage System
  • Solar Inverter 3-phase
  • Uninterruptible Power Supply
Technical Documentation & Design Resources
Application Notes (2) Package Drawings (1)
Data Sheets (1) Videos (1)
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NXH040F120MNF1PG Active 
Pb-free
Halide free
NXH040F120MNF1 PIM22 33.8x42.5 (PRESS FIT) 180BX NA BTRAY 28 $73.6648
NXH040F120MNF1PTG Active 
Pb-free
Halide free
NXH040F120MNF1, with TIM PIM22 33.8x42.5 (PRESS FIT) 180BX NA BTRAY 28 $73.6648
Market Leadtime (weeks) : 8 to 12
Market Leadtime (weeks) : 8 to 12

Product
Description
Pricing ($/Unit)
Compliance
Status
Configuration
VBR Max (V)
RDS(on) Typ (mΩ)
Package Type
NXH040F120MNF1PG  
 $73.6648 
Pb
H
 Active   
4-PACK
1200
40
PIM22 33.8x42.5 (PRESS FIT)
NXH040F120MNF1PTG  
 $73.6648 
Pb
H
 Active   
4-PACK
1200
40
PIM22 33.8x42.5 (PRESS FIT)
Case Outlines
180BX   
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