Silicon Carbide (SiC) Modules | NXH006P120MNF2

Silicon Carbide (SiC) Module - EliteSiC, 6 mohm SiC MOSFET, 1200 V, Half Bridge 2-PACK, F2 Package

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Overview

The NXH006P120MNF2 is a half-bridge or 2-PACK EliteSiC Module with 2 6mohm 1200V SiC MOSFET switches and a thermistor in an F2 package. The SiC MOSFET switches use M1 technology and are driven with 18V-20V gate drive.

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion

  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters

  • Robust M1 planar SiC MOSFET technology
  • 18V to 20V gate drive

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NXH006P120MNF2PTG

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CAD Model

Pb

A

H

P

PIM36 56.70x42.50x12.00

180BY

NA

0

BTRAY

20

F

2-PACK

1200

6

EV Charging, Energy Infrastructure

$178.6947

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Reliability Data

Die Related Summary Data

Device: NXH006P120MNF2PTG

Equivalent to wafer fab process: SIC

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Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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