NVXK2TR80WDT: Dual H-Bridge SiC Module in APM32 Series 

Datasheet: SiC Power MOSFET Module 1200 V, 80 mΩ, 20 A H-Bridge Power Module
Rev. 1 (494kB)
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SiC Power MOSFET Module 1200 V, 80 mOhm in Dual H -Bridge configuration , Al²O³ DBC substrate.

Features   Benefits
     
  • DIP Silicon Carbide Dual H-Bridge power module for on-board charger (OBC) for xEV applications
 
  • Enable Design of Small, Efficient and Reliable System for Reduced Vehicle Fuel Consumption and CO2 Emission
  • Creepage and clearance per IEC60664-1, IEC 60950-1
 
  • Simplified Assembly, Optimized Layout, High Level of Integration, and Improved Thermal Performance
  • Compact design
   
  • Module serialization for full traceability
   
  • Lead free, ROHS and UL94V-0 compliant
   
  • Automotive qualified per AEC-Q101 and AQG324
   
Applications   End Products
  • Onboard Charger and HV DC DC in EV−PHEV
 
  • 11 -22kW On−board Charger for EV−PHEV
Technical Documentation & Design Resources
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NVXK2TR80WDT Active 
AEC Qualified
PPAP Capable
Pb-free
Halide free
NVXK2TR80WDT, Dual H-Bridge SiC Mosfet Power Module APM32 AUTOMOTIVE MODULE 1 260 Tube 60 Contact Sales Office
Market Leadtime (weeks) : 4 to 8

Product
Description
Pricing ($/Unit)
Compliance
Status
Configuration
VBR Max (V)
RDS(on) Typ (mΩ)
Application
Package Type
NVXK2TR80WDT  
Pb
A
H
P
 Active   
Half-Bridge
1200
80
Automotive OBC
APM32 AUTOMOTIVE MODULE
Case Outlines
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