Si/SiC Hybrid Modules | NXH350N100H4Q2

SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode

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Overview

The NXH350N100H4Q2 is a power integrated module (PIM) containing a single I-type NPC stage containing 100 A, 1200 V SiC diodes for the neutral point clamps, 350 A, 1000 V IGBTs for the outer IGBTs and 300 A, 1000 V IGBTs for the inner IGBTs. The inverse diodes for the IGBTs are specified at 170 A for switching. An on-board thermistor is included.

  • DC-AC Conversion in 1500V system

  • 1500V Decentralized Utility Solar Inverters
  • 1500V Energy Storage Systems

  • Module with low thermal impedance baseplate
  • Solder and press-fit options
  • 1000V low VCE(SAT) IGBTs and 1200V SiC diode optimized combination for DC-AC conversion

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NXH350N100H4Q2F2PG

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Obsolete

CAD Model

Pb

A

H

P

Q2

180BH

NA

0

BTRAY

36

N

I-Type NPC Inverter

1000

350

1.45

2.03

Price N/A

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NXH350N100H4Q2F2SG

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Obsolete

CAD Model

Pb

A

H

P

Q2

180BS

NA

0

BTRAY

36

N

I-Type NPC Inverter

1000

350

1.45

2.03

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: NXH350N100H4Q2F2PG

Equivalent to wafer fab process: SIC

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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