IGBT Modules | PCGA160T65NF8

IGBT, 650 V, 160 A Field Stop Trench Gen3 (FS3) Bare Die. Pairing with PCRKA16065F8

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Overview

This 650V Field Stop Trench Gen3 (FS3) IGBT bare die has a die size of 10mm x 7mm. It can be used to build power module with Al wirebonding

  • Traction Module
  • General Purpose Power Module

  • EV/HEV
  • Automotive

  • AEC-Q101 Qualified
  • Max Junction Temperature 175°C
  • Positive Temperature Co-efficient
  • Ease of Paralleling
  • Short Circuit Rated
  • Very Low Saturation Voltage: VCE(SAT) = 1.6V (Typ.) @ IC = 160A
  • Optimized for Motor Control Applications

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Reliability Data

Die Related Summary Data

Device: PCGA160T65NF8

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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