IGBT Modules | NXH75M65L4Q1

IGBT Module, H6.5 Topology, 650 V, 75 A IGBT, 650 V, 50 A Diode

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Overview

The NXH75M65L4Q1 is an IGBT module with H6.5 topology in a Q1 package. The module contains six 75 A, 650 V IGBTs, five 50 A, 650V Stealth diodes and a thermistor.

  • DC-AC Conversion

  • Residential Solar Inverters (Single Phase Power)
  • UPS (Single Phase Power)
  • Energy Storage Systems (Single Phase Power)

  • Fast switching FieldStop 4 Trench IGBTs with low VCE(SAT) and low switching loss
  • Module solution
  • Three level H6.5 topology
  • Low inductive layout in module
  • Solder pins

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MSL Type

MSL Temp (°C)

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VBR Max (V)

Rated Current (A)

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NXH75M65L4Q1PTG

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Active

CAD Model

Pb

A

H

P

Q1

180CP

NA

0

BTRAY

21

F

H6.5 Topology

650

75

1.56

2.1

Industrial

$47.1587

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NXH75M65L4Q1SG

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Active

CAD Model

Pb

A

H

P

Q1

180CA

NA

0

BTRAY

21

Y

H6.5 Topology

650

75

1.56

2.1

Industrial

$52.2277

More Details

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Reliability Data

Die Related Summary Data

Device: NXH75M65L4Q1PTG

Equivalent to wafer fab process: SIC

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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