IGBT Modules | NXH160T120L2Q1

Power Integrated Module (PIM), IGBT 1200 V, 160 A and 650 V, 100 A

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Overview

The NXH160T120L2Q1 is a power integrated module (PIM) containing a split T-type neutral point clamped three-level inverter, consisting of two 160A/1200V half-bridge IGBTs with inverse diodes, two neutral point 100A/1200V rectifiers, two 100A/650V neutral point IGBTs with inverse diodes, two half-bridge 100A/650V rectifiers and a negative temperature coefficient thermistor (NTC).The product is available in press-fit and solder pin versions.

  • Solar Inverter DC-AC stage
  • UPS DC-AC stage
  • Battery Storage DC-AC stage

  • Solar Inverter
  • UPS
  • Battery Storage

  • 1200V IGBT Specifications: VCE(SAT) = 2.1V @ 160A, ESW = 6.3mJ @ 100A
  • 650V IGBT Specifications: VCE(SAT) = 1.65V @ 150A, ESW = 3.8mJ @ 100A
  • Thermistor
  • 150A rated half bridge diodes

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NXH160T120L2Q1PG

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Obsolete

CAD Model

Pb

A

H

P

Q1

180AD

NA

0

BTRAY

21

N

Split T-Type Inverter

1200

160

2.1

2.2

Industrial

Price N/A

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NXH160T120L2Q1SG

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Lifetime

CAD Model

Pb

A

H

P

Q1

180AQ

NA

0

BTRAY

21

N

Split T-Type Inverter

1200

160

2.1

2.2

Industrial

$77.683

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Reliability Data

Die Related Summary Data

Device: NXH160T120L2Q1PG

Equivalent to wafer fab process: BP STD LINEAR

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BP STD LINEAR

10

12120914040

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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