Small Signal MOSFETs | NVMD4N03

Dual N-Channel Power MOSFET 30V, 4A, 60mΩ

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Overview

Automotive Power MOSFET. 30V, 4A, 60 mΩ, Dual N-Channel, S0-8, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

  • DC−DC Converters
  • Computers
  • Printers
  • Cellular and Cordless Phones
  • Disk Drives and Tape Drives

  • Designed for use in low voltage, high speed switching applications
  • Ultra Low On-Resistance Provides Higher Efficiency and Extends Battery Life
  • Miniature SO-8 Surface Mount Package - Saves Board Space
  • Diode is Characterized for Use in Bridge Circuits
  • Diode Exhibits High Speed, with Soft Recovery
  • AEC−Q101 Qualified and PPAP Capable
  • RoHS Compliant

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Wide SOA Mosfets

Configuration

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V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

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RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

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Qgd Typ @ VGS = 4.5 V (nC)

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Reference Price

NVMD4N03R2G

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CAD Model

Pb

A

H

P

SOIC-8

751-07

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8N

Small Signal

Standard

0

NA

0

30

Q1: 60.0, Q2: 60.0

20

3

4

2

-

-

-

8

285

-

8

95

35

$0.6956

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Reliability Data

Die Related Summary Data

Device: NVMD4N03R2G

Equivalent to wafer fab process: HD3e

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

HD3e

0

8569312242

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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