P-Channel Power MOSFET, -60V, -4A, 100mΩ

Obsolete

Overview

This Power MOSFET is produced using onsemi’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.

  • Reverse Battery Protection
  • High Side Load Switch

  • Head Light Unit
  • DC-DC Module

  • Low On-Resistance
  • High ESD protection HBM:H1C, CDM:C5
  • RoHS compliance
  • 4V drive

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVC6S5A354PLZT1G

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Obsolete

CAD Model

Pb

A

H

P

CPH-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

CPH-6

Small Signal

Logic

0

NA

0

-60

100

20

-2.6

-4

1.9

-

135

-

14

600

-

-

60

50

Price N/A

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